24N60M2 MOSFET N-channel (650V,18A ,0.168Ω) Original

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics,rendering it suitable for the most demanding highefficiency converters.

The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments

-Extremely low gate charge

-Excellent output capacitance (COSS) profile

-100% avalanche tested
-Zener-protected

-Wide creepage distance of 4.25 mmbetween the pins