FGA25N120ANTD IGBT N – Ch (1200V , 50A)

Features : 

Type Designator: FGA25N120ANTD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 312
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 60
Collector Capacity (Cc), typ, pF: 130
Total Gate Charge (Qg), typ, nC: 200
Package: TO3P