MMBTSC3875Y (1E) is a NPN surface mount epitaxial silicon transistor with High voltage, low current small signal.
Features:
- Collector-base voltage (VCBO): 60 V
- Collector-emitter voltage (VCEO): 50 V
- Emitter-base voltage (VEBO): 5 V
- Collector current (Ic): 0.15 A
- High total power dissipation.(PC): 0.15W
- Excellent HFE Linearity



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